RELATIONSHIP BETWEEN THE ELECTRONIC STRUCTURE OF COHERENT COMPOSITION MODULATED ALLOYS AND THE SUPERMODULUS EFFECT = RELATION ENTRE LA STRUCTURE ELECTRONIQUE DES ALLIAGES A MODULATION DE COMPOSITION COHERENTE ET L'EFFET DE SUPERMODULEPICKETT WE.1982; JOURNAL OF PHYSICS F: METAL PHYSICS; ISSN 0305-4608; GBR; DA. 1982; VOL. 12; NO 10; PP. 2195-2204; BIBL. 29 REF.Article

TRANSFERABILITY AND THE ELECTRON-PHONON INTERACTION: A REINTERPRETATION OF THE RIGID-MUFFIN-TIN APPROXIMATION = TRANSMISSIBILITE ET INTERACTION ELECTRON-PHONON: UNE REINTERPRETATION DE L'APPROXIMATION MUFFIN-TIN RIGIDEPICKETT WE.1982; PHYSICAL REVIEW. B: CONDENSED MATTER; ISSN 0163-1829; USA; DA. 1982; VOL. 25; NO 2; PP. 745-754; BIBL. DISSEM.Article

EFFECT OF A VARYING DENSITY OF STATES ON SUPERCONDUCTIVITYPICKETT WE.1980; PHYS. REV. B; ISSN 0163-1829; USA; DA. 1980; VOL. 21; NO 9; PP. 3897-3901; BIBL. 21 REF.Article

RENORMALIZED THERMAL DISTRIBUTION FUNCTION IN AN INTERACTING ELECTRON-PHONON SYSTEM = FONCTION DE DISTRIBUTION THERMIQUE RENORMALISEE DANS UN SYSTEME ELECTRON PHONON INTERAGISSANTPICKETT WE.1982; PHYS. REV. LETT.; ISSN 0031-9007; USA; DA. 1982; VOL. 48; NO 22; PP. 1548-1551; BIBL. 13 REF.Article

ELECTRON-PHONON INTERACTION IN THE F-BAND METALS LA, CE AND TH: ELECTRONIC ASPECTS INCLUDING THE SPIN-ORBIT INTERACTIONSPICKETT WE.1981; PHYSICA B+C; ISSN 0378-4363; NLD; DA. 1981; VOL. 111; NO 1; PP. 1-10; BIBL. 19 REF.Article

THEORETICAL STUDY OF THE HYDROGEN-SATURATED IDEAL SILICON VACANCYPICKETT WE.1981; PHYS. REV. B; ISSN 0163-1829; USA; DA. 1981; VOL. 23; NO 12; PP. 6603-6609; BIBL. 15 REF.Article

THE GENERALIZED PSEUDOATOM POTENTIAL IN SOLIDS: RELATION TO SCREENING AND LATTICE DYNAMICSPICKETT WE.1979; J. PHYS. C; GBR; DA. 1979; VOL. 12; NO 8; PP. 1491-1503; BIBL. 2 P.Article

SELF-CONSISTENT ELECTRONIC STRUCTURE OF (110) GE-ZN-SEPICKETT WE; COHEN ML.1978; PHYS. REV., B; USA; DA. 1978; VOL. 18; NO 2; PP. 939-944; BIBL. 21 REF.Article

THEORETICAL STUDY OF RELAXATION AT THE (110) GE-GAAS INTERFACE.PICKETT WE; COHEN ML.1978; SOLID STATE COMMUNIC.; G.B.; DA. 1978; VOL. 25; NO 4; PP. 225-227; BIBL. 4 REF.Article

INFLUENCE OF ELECTRONIC STRUCTURE ON SUPERCONDUCTING PROPERTIES OF COMPLEX CRYSTALS: THEORY AND APPLICATION TO NB₃SN = INFLUENCE DE LA STRUCTURE ELECTRONIQUE SUR LES PROPRIETES SUPRACONDUCTRICES DE CRISTAUX COMPLEXES: THEORIE ET APPLICATION A NB₃SNPICKETT WE; KLEIN BM.1981; SOLID STATE COMMUN; ISSN 0038-1098; USA; DA. 1981; VOL. 38; NO 2; PP. 95-98; BIBL. 13 REF.Article

OPTICAL PROPERTIES OF NB AND MO CALCULATED FROM AUGMENTED-PLANE-WAVE BAND STRUCTURES.PICKETT WE; ALLEN PB.1975; PHYS. REV., B; U.S.A.; DA. 1975; VOL. 11; NO 10; PP. 3599-3603; BIBL. 16 REF.Article

LOCAL-DENSITY-FUNCTIONAL APPROACH TO THE ISOSTRUCTURAL GAMMA -ALPHA TRANSITION IN CERIUM USING THE SELF-CONSISTENT LINEARIZED-AUGMENTED-PLANE-WAVE METHOD = APPROCHE PAR LA FONCTIONNELLE DE DENSITE LOCALE A LA TRANSITION GAMMA -ALPHA ISOSTRUCTURALE DANS LE CERIUM EN UTILISANT LA METHODE AUTOCONSISTANTE DES ONDES PLANES AMELIOREES LINEARISEESPICKETT WE; FREEMAN AJ; KOELLING DD et al.1981; PHYS. REV. B; ISSN 0163-1829; USA; DA. 1981; VOL. 23; NO 3; PP. 1266-1291; BIBL. 84 REF.Article

METALLIC BONDING AND THE CHARACTER OF ELECTRONIC STATES IN NB₃GE AND NB₃ALHO KM; PICKETT WE; COHEN ML et al.1978; PHYS. REV. LETTERS; USA; DA. 1978; VOL. 41; NO 8; PP. 580-582; BIBL. 14 REF.Article

GE-GAAS (110) INTERFACES: A SELF-CONSISTENT CALCULATION OF INTERFACE STATES AND ELECTRONIC STRUCTURE.PICKETT WE; LOUIE SG; COHEN ML et al.1977; PHYS. REV. LETTERS; U.S.A.; DA. 1977; VOL. 39; NO 2; PP. 109-112; BIBL. 8 REF.Article

SELF-CONSISTENT LINEARIZED AUGMENTED-PLANE-WAVE STUDY OF THE ELECTRONIC STRUCTURE AND SUPERCONDUCTIVITY OF FCC LANTHANUM UNDER PRESSURE = ETUDE PAR ONDE PLANE AMELIOREE LINEARISEE AUTOCONSISTANTE DE LA STRUCTURE ELECTRONIQUE ET DE LA SUPRACONDUCTIVITE DU LANTHANE CFC SOUS PRESSIONPICKETT WE; FREEMAN AJ; KOELLING DD et al.1980; PHYS. REV. B; ISSN 0163-1829; USA; DA. 1980; VOL. 22; NO 6; PP. 2695-2715; BIBL. 71 REF.Article

ELECTRONIC PROPERTIES OF NB₃GE AND NB₃AL FROM SELF-CONSISTENT PSEUDOPOTENTIALS. I: BAND STRUCTURE AND DENSITY OF STATESPICKETT WE; HO KM; COHEN ML et al.1979; PHYS. REV., B; USA; DA. 1979; VOL. 19; NO 4; PP. 1734-1750; BIBL. 58 REF.Article

THEORY OF THE HYDROGEN INTERSTITIAL IMPURITY IN GERMANIUMPICKETT WE; COHEN ML; KITTEL C et al.1979; PHYS. REV. B; ISSN 0163-1829; USA; DA. 1979; VOL. 20; NO 12; PP. 5050-5058; BIBL. 21 REF.Article

SELF-CONSISTENT ELECTRONIC STRUCTURE OF A VACANCY IN ALUMINUM = STRUCTURE ELECTRONIQUE AUTOCOHERENTE D'UNE LACUNE DANS L'ALUMINIUMCHAKRABORTY B; SIEGEL RW; PICKETT WE et al.1981; PHYSICAL REVIEW. B: CONDENSED MATTER; ISSN 0163-1829; USA; DA. 1981; VOL. 24; NO 10; PP. 5445-5454; BIBL. 35 REF.Article

MAXIMUM SUPERCONDUCTING TRANSITION TEMPERATURES IN A15 COMPOUNDS.HO KM; COHEN ML; PICKETT WE et al.1978; PHYS. REV. LETTERS; USA; DA. 1978; VOL. 41; NO 12; PP. 815-818; BIBL. 15 REF.Article

ANOMALOUS RESISTIVITIES OF A15 METALS. INSIGHTS FROM BAND THEORY.ALLEN PB; PICKETT WE; HO KM et al.1978; PHYS. REV. LETTERS; U.S.A.; DA. 1978; VOL. 40; NO 23; PP. 1532-1534; BIBL. 16 REF.Article

ANHARMONICITY AS AN EXPLANATION FOR ANOMALOUS RESISTANCE OF HIGHT-T_C SUPERCONDUCTORSALLEN PB; HUI JCK; PICKETT WE et al.1976; SOLID STATE COMMUNIC.; G.B.; DA. 1976; VOL. 18; NO 9-10; PP. 1157-1159; BIBL. 13 REF.Article

Scattering theory for hyperbolic equations of order 2mPICKETT, D.Mathematical methods in the applied sciences. 1992, Vol 15, Num 1, pp 57-71, issn 0170-4214Article

Contextualizing Penn's Excavations at Beth Shean (1921―1933) = Contextualiser les fouilles du Penn à Beth Shean (1921-1933)PICKETT, Jordan.Expedition. 2013, Vol 55, Num 1, pp 12-15, issn 0014-4738, 4 p.Article

Domestic Devotions in Late Antique Beth Shean = Dévotions domestiques dans l'Antiquité tardive à Beth SheanPICKETT, Jordan.Expedition. 2013, Vol 55, Num 1, pp 21-23, issn 0014-4738, 3 p.Article

Serious issues relating to counterfeit dermal fillers available from Internet sourcesPICKETT, Andy.Journal of the American Academy of Dermatology. 2011, Vol 65, Num 3, pp 642-643, issn 0190-9622, 2 p.Article